Three-dimensional integrated circuit laminate, and interlayer filler for three-dimensional integrated circuit laminate

ABSTRACT

To provide a three-dimensional integrated circuit laminate filled in with an interlayer filler composition having both high thermal conductivity and low linear expansion property. 
     A three-dimensional integrated circuit laminate, which comprises a semiconductor substrate laminate having at least two semiconductor substrates each having a semiconductor device layer formed thereon laminated, and has a first interlayer filler layer containing a resin (A) and an organic filler (B) and having a thermal conductivity of at least 0.8 W/(m·K) between the semiconductor substrate.

TECHNICAL FIELD

The present invention relates to a three-dimensional integrated circuitlaminate having semiconductor substrates laminated, and an interlayerfiller for a three-dimensional integrated circuit laminate.

BACKGROUND ART

In recent years, for further improvement in the performance ofsemiconductor devices such as speeding up and an increase in thecapacity, research and development is in progress to improve theperformance by a three-dimensional (3D) lamination having at least twosemiconductor substrates laminated, in addition to refinement oftransistors and wiring.

Specifically, such a process is proposed (non-Patent Documents 1 and 2)that a thin film of an interlayer filler composition is formed by anunderfilling process of pouring a filler from the side of semiconductorsubstrates after bonding of the substrates or by application to a wafer,and then B-stage formation is carried out, then semiconductor substratesare cut out by dicing (wafer cutting), temporary bonding by pressureheating is repeatedly carried out by using the semiconductor substrates,and finally main bonding (solder bonding) is carried out under pressureheating conditions to form a three-dimensional integrated circuitlaminate.

For practical use of such a three-dimensional integrated circuit device,various problems have been pointed out. One of them is a problem ofdissipation of heat generated from a device such as a transistor orwiring. This problem results from a commonly very low thermalconductivity of an interlayer filler composition to be used forlamination of semiconductor substrates as compared with metals andceramics, and there are concerns about a decrease in the performancesuch as malfunction of a semiconductor device due to accumulation ofheat in a laminate of the semiconductor substrates.

As a further problem, the coefficient of linear thermal expansionrequired for the interlayer filler composition varies depending upon thedifference in the structure of a laminate of the semiconductorsubstrates. In a three-dimensional integrated circuit laminatecomprising a semiconductor substrate laminate having semiconductorsubstrates bonded and laminated, the interlayer filler layer formedbetween the semiconductor substrates preferably has low linear thermalexpansion property.

As another problem, there is a problem of the dielectric constant of theinterlayer filler composition to be used for lamination of asemiconductor device. In recent years, the operating frequency of asemiconductor device increases year by year, and the conduction velocityexceeding the GHz level is required for signal transmission betweensemiconductor substrates not only inside a semiconductor substrate. Onthat occasion, if the dielectric constant of an interlayer fillercomposition to be used for lamination of a semiconductor device is high,signal transmission delays in wiring between substrates will occur, thusleading to a decrease in the operating speed of the entire device.

On the other hand, in a three-dimensional integrated circuit laminatehaving the semiconductor substrate laminate further bonded to an organicsubstrate, to an interlayer filler layer formed between thesemiconductor substrate laminate and the organic substrate, a potentialstress is applied due to a difference in the coefficient of linearthermal expansion by heat between the semiconductor substrates and theorganic substrate, and accordingly if the interlayer filler layer doesnot have an appropriate coefficient of linear thermal expansion,destruction of the semiconductor device layer, breakage of the electricsignal connection terminal, or the like may occur in some cases.

As one means to solve the problems, an increase in thermal conductivityof the interlayer filler composition applied to between the substratesof a three-dimensional integrated circuit laminate may be mentioned. Forexample, a highly thermally conductive epoxy resin is used as a resinitself constituting the interlayer filler composition, or such a resinis combined with a highly thermally conductive inorganic filler, to tryto make the interlayer filler composition be highly thermallyconductive. For example, a resin composition having high thermalconductivity by an epoxy resin having mesogen (a structure which islikely to be self-aligned) and a curing agent has been reported (PatentDocument 1).

Further, in order to control the coefficient of linear thermal expansionof the interlayer filler while suppressing an increase in the dielectricconstant, it has been disclosed to blend silica particles as aninorganic filler in a resin (Patent Document 2).

Further, it has been disclosed to blend boron nitride having highthermal conductivity, not a conventional silica filler, as an inorganicfiller in a resin (Patent Document 3).

PRIOR ART DOCUMENTS Patent Documents

-   Patent Document 1: Japanese Patent No. 4118691-   Patent Document 2: JP-A-2004-123796-   Patent Document 3: JP-A-2008-510878

Non-Patent Documents

-   Non-Patent Document 1: Electro Packaging Technologies (CMC    Publishing Co., Ltd.), p 102 (2003)-   Non-Patent Document 2: Proceedings of the Japan Institute of    Electronics Packaging, Annual Meeting (Japan Institute of    Electronics Packaging), p 61, p 23 (2009)

DISCLOSURE OF INVENTION Technical Problem

In the above three-dimensional integrated circuit laminate havingsemiconductor substrates laminated, for further improvement in theperformance such as speeding up of signal transmission and an increasein the capacity, the distance between the semiconductor substrates isestimated to be 50 μm or shorter, and a three-dimensional integratedcircuit laminate having such a minute space between the semiconductorsubstrates filled with an interlayer filler composition having highthermal conductivity and a low coefficient of linear thermal expansionto bond the semiconductor substrates has been desired.

As a conventional technique to fill a space between semiconductorsubstrates, an underfilling process of bonding a semiconductor substrateand an organic substrate or bonding organic substrates has beenproposed. Bonding is carried out after applying a flux (a solder flux)to electric connection terminals, and after the flux is cleaned away,the space is filled with a filler from the side of the substrates bymeans of capillarity. However, due to a very short distance between thesemiconductor substrates, it tends to be difficult to clean the fluxaway after bonding and to uniformly fill the space with the interlayerfiller composition.

Further, as a method of laminating a semiconductor substrate on anothersubstrate, an OBAR (over bump applied resin) method has also beenproposed, which comprises bonding of substrates after an interlayerfiller composition is applied to the substrate. However, the thermalconductivity of the interlayer filler composition employed for the OBARmethod is at the same level as the material for the underfillingprocess, and it was insufficient as the thermal conductivity between thesemiconductor substrates in the three-dimensional integrated circuitlaminate.

Further, the maximum particle size of the filler blended in theinterlayer filler layer of the three-dimensional integrated circuitlaminate is desired to be at most about one-third of the thickness ofthe interlayer filler layer, so as to realize secure bonding of thesemiconductor substrate. However, the spherical boron nitride aggregatesdisclosed in Patent Document 2 have a high thermal conductivity but havelarge particle sizes, and accordingly when they are used as a filler tobe blended in the interlayer filler composition forming the interlayerfiller layer of the three-dimensional integrated circuit laminate, theymay inhibit bonding of the semiconductor substrate.

On the other hand, if a filler having small particle sizes is used, itcan hardly be uniformly mixed when blended with a resin constituting theinterlayer filler composition. In addition, the number of points ofcontact of thermally conductive paths by the filler in the interlayerfiller layer is increased, whereby the possibility of the thermallyconductive paths being connected from top to bottom in the thicknessdirection between the semiconductor substrates tends to be low, and thethermal conductivity in the thickness direction of the interlayer fillerlayer may be insufficient.

Further, conventional boron nitride has a hexagonal crystal structure inwhich hexagonal network layers are laminated in a two layer cycle, andthe thickness relative to the size of the crystal face tends to besmall. Accordingly, addition of a boron nitride filler in a large amountrelative to the resin so as to increase the thermal conductivityincreases the viscosity, whereby bonding of the substrates will bedifficult, and even if the boron nitride filler is added, it has beendifficult to achieve predetermined thermal conductivity.

Under these circumstances, it is an object of the present invention toprovide a three-dimensional integrated circuit laminate comprising alaminate having at least two silicon substrates each having asemiconductor device layer formed thereon laminated or a laminate havingsuch a laminate further mounted on an organic substrate, filled in withan interlayer filler composition having both high thermal conductivityand low linear thermal expansion property, by laminating semiconductordevice substrates by an interlayer filler composition comprisingspecific resin and inorganic filler in combination.

Solution to Problem

The present inventors have conducted extensive studies and as a result,they have found that the above object can be achieved by the presentinvention, and accomplished the present invention.

That is, the present invention provides the following.

(1) A three-dimensional integrated circuit laminate, which comprises asemiconductor substrate laminate having at least two semiconductorsubstrates each having a semiconductor device layer formed thereonlaminated, and has a first interlayer filler layer containing a resin(A) and an inorganic filler (B) and having a thermal conductivity of atleast 0.8 W/(m·K) between the semiconductor substrates.(2) The three-dimensional integrated circuit laminate according to theabove (1), wherein the coefficient of linear thermal expansion of thefirst interlayer filler layer is at least 3 ppm/K and at most 70 ppm/K.(3) The three-dimensional integrated circuit laminate according to theabove (1) or (2), wherein the dielectric constant of the inorganicfiller (B) contained in the first interlayer filler layer is at most 6.(4) The three-dimensional integrated circuit laminate according to anyone of the above (1) to (3), wherein the inorganic filler (B) containedin the first interlayer filler layer has an average particle size of atleast 0.1 μm and at most 10 μm, a maximum particle size of 10 μm, and athermal conductivity of at least 2 W/(m·K).(5) A three-dimensional integrated circuit laminate, which comprises asemiconductor substrate laminate having at least two semiconductorsubstrates each having a semiconductor device layer formed thereonlaminated, and has a first interlayer filler layer containing a resin(A) and an inorganic filler (B) and having a coefficient of linearthermal expansion of at least 3 ppm/K and at most 70 ppm/K between thesemiconductor substrates, and the inorganic filler (B) having an averageparticle size of at least 0.1 μm and at most 10 μm and a maximumparticle size of 10 μm.(6) A three-dimensional integrated circuit laminate, which comprises asemiconductor substrate laminate having at least two semiconductorsubstrates each having a semiconductor device layer formed thereonlaminated, and has a first interlayer filler layer containing a resin(A) and an inorganic filler (B) between the semiconductor substrates,and the inorganic filler (B) having an average particle size of at least0.1 μm and at most 10 μm, a maximum particle size of 10 μm, and adielectric constant of at most 6.(7) The three-dimensional integrated circuit laminate according to anyone of the above (1) to (6), wherein the first interlayer filler layercontains the inorganic filler (B) in an amount of at least 50 parts byweight and at most 400 parts by weight per 100 parts by weight of theresin (A).(8) The three-dimensional integrated circuit laminate according to anyone of the above (1) to (7), wherein the specific surface area of theinorganic filler (B) contained in the first interlayer filler layerbetween the semiconductor substrates is at least 1 m²/g and at most 60m²/g.(9) The three-dimensional integrated circuit laminate according to anyone of the above (1) to (8), wherein the semiconductor substrates aresilicon substrates.(10) The three-dimensional integrated circuit laminate according to anyone of the above (1) to (9), wherein of the inorganic filler (B), theaverage particle size is at least 0.2 μm and at most 5 μm, and thespecific surface area is at least 1 m²/g and at most 25 m²/g.(11) The three-dimensional integrated circuit laminate according to anyone of the above (1) to (10), wherein the inorganic filler (B) is boronnitride.(12) The three-dimensional integrated circuit laminate according to anyone of the above (1) to (11), wherein the resin (A) is a resincontaining an epoxy resin as the main component.(13) The three-dimensional integrated circuit laminate according to anyone of the above (1) to (12), wherein the thickness of the firstinterlayer filler layer is at least 1 μm and at most 50 μm.(14) The three-dimensional integrated circuit laminate according to anyone of the above (1) to (13), which has solder connection terminals forelectric signal connection between the semiconductor substrates eachhaving a semiconductor device layer formed thereon in the firstinterlayer filler layer.(15) The three-dimensional integrated circuit laminate according to anyone of the above (1) to (14), wherein the semiconductor substratelaminate is further mounted on an organic substrate, and a secondinterlayer filler layer containing a resin (a) and an inorganic filler(b) is formed between the semiconductor substrate laminate and theorganic substrate.(16) The three-dimensional integrated circuit laminate according to theabove (15), wherein the organic substrate has a multilayer circuitstructure having a wiring layer containing copper in a resin platecontaining an epoxy resin as a resin component.(17) The three-dimensional integrated circuit laminate according to theabove (15) or (16), wherein the second interlayer filler layer containsthe inorganic filler (b) in an amount of at least 50 parts by weight andat most 400 parts by weight per 100 parts by weight of the resin (a).(18) The three-dimensional integrated circuit laminate according to anyone of the above (15) to (17), wherein the coefficient of linear thermalexpansion of the second interlayer filler layer is at least 10 ppm/K andat most 50 ppm/K.(19) The three-dimensional integrated circuit laminate according to anyone of the above (15) to (18), wherein the dielectric constant of thesecond interlayer filler layer is at most 6.(20) The three-dimensional integrated circuit laminate according to anyone of the above (15) to (19), wherein the resin (a) is a resincontaining an epoxy resin as the main component.(21) The three-dimensional integrated circuit laminate according to anyone of the above (15) to (20), wherein the inorganic filler (b) has anaverage particle size of at least 0.1 μm and at most 20 μm, a maximumparticle size of 30 μm, a specific surface area of at least 1 m²/g andat most 60 m²/g, a thermal conductivity of at least 1 W/(m K), and adielectric constant of at most 6.(22) An interlayer filler for a first interlayer filler layer betweensemiconductor substrates of a three-dimensional integrated circuitlaminate comprising a semiconductor substrate laminate having at leasttwo semiconductor substrates each having a semiconductor device layerformed thereon laminated, which comprises a resin (A) and an inorganicfiller (B) having an average particle size of at least 0.1 μm and atmost 5 μm, a maximum particle size of 10 μm and a dielectric constant ofat most 6, and has a coefficient of linear thermal expansion of at least3 ppm/K and at most 70 ppm/K.(23) An interlayer filler for a second interlayer filler layer between asemiconductor substrate laminate and an organic substrate of athree-dimensional integrated circuit laminate comprising thesemiconductor substrate laminate having at least two semiconductorsubstrates each having a semiconductor device layer formed thereonlaminated, which comprises a resin (a) and an inorganic filler (b)having an average particle size of at least 0.1 μm and at most 20 μm, amaximum particle size of 30 μm and a dielectric constant of at most 6,and has a coefficient of linear thermal expansion of at least 10 ppm/Kand at most 50 ppm/K.(24) The interlayer filler according to the above (22) or (23), whereinthe specific surface area of the inorganic filler (B) or (b) is at least1 m²/g and at most 60 m²/g.

Advantageous Effects of Invention

According to the present invention, by laminating semiconductorsubstrates each having a semiconductor device layer formed thereon by aninterlayer filler layer having high thermal conductivity, a lowdielectric constant and a low linear thermal expansion property, it ispossible to form a three-dimensional integrated circuit laminate havingexcellent reliability in which thermal conductivity between thesemiconductor substrates is accelerated and the temperature of thesemiconductor device substrates is lowered, thereby to achieve a highdissipation property and high speed operation, and a semiconductordevice can stably be operated.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross-sectional view conceptually illustrating athree-dimensional integrated circuit laminate according to a firstembodiment of the present invention (first three-dimensional integratedcircuit laminate).

FIG. 2 is a view schematically illustrating the cross-sectionalstructure of a semiconductor substrate.

FIG. 3 is a cross-sectional view conceptually illustrating athree-dimensional integrated circuit laminate according to a secondembodiment of the present invention (second three-dimensional integratedcircuit laminate).

DESCRIPTION OF EMBODIMENTS

Now, the present invention will be described. However, the presentinvention is not limited to the following description, and variousmodifications are possible within a range of the scope of the invention.

(1) First Three-Dimensional Integrated Circuit Laminate

The three-dimensional integrated circuit laminate of the presentinvention comprises a semiconductor substrate laminate having at leasttwo semiconductor substrates each having a semiconductor device layerformed thereon laminated, and has a first interlayer filler layercontaining a resin (A) and an organic filler (B) and having a thermalconductivity of at least 0.8 W/(m·K) between the semiconductorsubstrates.

In FIG. 1, a cross-sectional view conceptually illustrating athree-dimensional integrated circuit laminate according to a firstembodiment of the present invention (hereinafter referred to as a firstthree-dimensional integrated circuit laminate) is shown. In FIG. 1, foreasy understanding of the structure of the three-dimensional integratedcircuit laminate, the thickness and the size of constituents relative tosemiconductor substrates are indicated larger than the actual sizes.

As shown in FIG. 1, a first three-dimensional integrated circuitlaminate 1 comprises a semiconductor substrate laminate having three(three-layer is only an example, and the number of layers is not limitedso long as it is two or more) semiconductor substrates 10, 20 and 30respectively having semiconductor device layers 11, 21 and 31 formedthereon laminated.

The first three-dimensional integrated circuit laminate 1 has firstinterlayer filler layers 40 and 50 each containing a resin (A) and aninorganic filler (B) respectively between the semiconductor substrates10 and 20 and between the semiconductor substrates 20 and 30.

In FIG. 2, a view schematically illustrating the cross-sectionalstructure of the semiconductor substrate 10 is shown. On thesemiconductor substrate 10, a semiconductor device layer 11 containing aminute electronic circuit is formed. On the surface of the semiconductordevice layer 11, a buffer coat film 12 comprising a polyimide resin orthe like is formed so as to protect it from the outside. Further, on thesemiconductor substrate 10, semiconductor substrate through-holeelectrodes 13 provided to run through the substrate, land electrodes 14and solder bumps 15 are provided so as to secure electric connectionwith a semiconductor device layer 21 on the semiconductor substrate 20adjacent to the semiconductor substrate 10 having the same structure asthe semiconductor substrate 10, in the three-dimensional integratedcircuit laminate 1.

Further, on the semiconductor substrates 10, 20 and 30, semiconductorsubstrate through-hole electrodes 13, 23 and 33 provided to run throughthe substrates, land electrodes 24, 34 and solder bumps 15, 25 and 35are provided so as to secure electric connection between semiconductordevices on adjacent semiconductor substrates (10 and 20, and 20 and 30),in the first three-dimensional integrated circuit laminate 1.

The land electrodes 24 and the solder bumps 15, and the land electrodes34 and the solder bumps 25, are respectively present as included in thefirst interlayer filler layers 40 and 50, and have a function to connectelectric signals between the semiconductor substrates 10 and 20, and 20and 30.

Here, the lands electrodes 24 and the solder connection terminalscomprising the solder bumps 15 for electric signal connection betweenthe semiconductor substrates each having the semiconductor device layer11 formed thereon are included in the first interlayer filler layers 40and 50, however, their structure is not limited thereto so long aselectric connection between semiconductor device layers on therespective semiconductor substrates can be secured.

Now, the first three-dimensional integrated circuit laminate comprisingthe semiconductor substrate laminate of the present invention will bedescribed in detail.

(1-1) Semiconductor Substrate

As the semiconductor substrate in the first three-dimensional integratedcircuit laminate, any one made of an optional material which can be usedas a substrate in production of an integrated circuit may be used, and asilicon substrate is preferably used. The silicon substrate may be usedwith a substrate film thickness depending upon the aperture, or may beused after film thickness reduction to at most 100 μm by back-sidepolishing such as back side etching or back grinding.

As the solder bumps, minute solder balls may be used, or openings areformed by lithography, solder plating is applied directly to the base ofthe openings or to posts formed of nickel or copper, and a resistmaterial is removed, followed by heat treatment to form solder bumps.The composition of the solder is not particularly limited, however, asolder containing copper as the principal component is preferably usedconsidering the electric bonding property and the low temperaturebonding property.

The land terminals may be formed by forming a thin film on thesemiconductor substrate e.g. by PVD (physical vapor deposition), forminga resist film by lithography, and removing unnecessary portions by dryor wet etching. The material of the land electrodes is not particularlylimited so long as they can be bonded to the solder bumps, but gold orcopper may preferably be used considering the bonding property to thesolder, the reliability, etc.

(1-2) First Interlayer Filler Layer

The first interlayer filler layer is formed between the semiconductorsubstrates and contains a resin (A) and an inorganic filler (B).

The dielectric constant of the first interlayer filler layer ispreferably at most 5, more preferably at most 4. If the dielectricconstant of the first interlayer filler layer exceeds 5, signaltransmission delays in wiring between the substrates will occur, thusleading to a decrease in the operating speed of the entire device, suchbeing unfavorable. Accordingly, the dielectric constant of the inorganicfiller (B) contained in the first interlayer filler layer is preferablyat most 6. A first interlayer filler layer containing the inorganicfiller (B) having a dielectric constant of at most 6 with an appropriateaddition amount can achieve a low dielectric property to satisfy theperformance as a semiconductor substrate laminate.

The thermal conductivity of the first interlayer filler layer isessentially at least 0.8 W/(m·K), more preferably at least 1.0 W/(m·K).The thermal conductivity is preferably higher, but is usually at most 10W/(m·K).

If the thermal conductivity of the first interlayer filler layer is lessthan 0.8 W/(m·K), thermal conductivity between the semiconductorsubstrates is not sufficient, and the temperature of the semiconductorsubstrate will be high due to accumulation of heat, and such may causeoperation failure, such being unfavorable. Accordingly, the thermalconductivity of the inorganic filler (B) contained in the firstinterlayer filler layer is preferably at least 2 W/(m·K).

When the thermal conductivity of the inorganic filler (B) is at least 2W/(m·K), the thermal conductivity will be higher by about 5 times ascompared with the resin (A), and the thermal conductivity of theinterlayer filler layer can sufficiently be improved with an appropriateaddition amount.

If at least one of the average particle size, the specific surface areaand the thermal conductivity of the inorganic filler (B) does notsatisfy the conditions, the first interlayer filler layer cannot have asufficient thermal conductivity.

Of the first interlayer filler layer, the coefficient of linear thermalexpansion is preferably at least 3 ppm/K and at most 70 ppm/K, morepreferably at least 10 ppm/K and at most 60 ppm/K.

When the coefficient of linear thermal expansion of the first interlayerfiller layer is within the above range, a potential stress due to thecoefficient of expansion of the semiconductor substrate by a change inthe temperature at the time of operating the semiconductor can bereduced, and stable operation will be possible without destruction ofthe semiconductor device layers, breakage of the electric signalconnection terminals, or the like.

Since a potential stress will occur in the interlayer filler layer dueto a difference in the coefficient of expansion by heat between thesemiconductor substrates and the organic substrate, if the interlayerfiller layer does not have an appropriate coefficient of linear thermalexpansion, destruction of the semiconductor device layer, breakage ofelectric signal connection terminals, or the like may occur in somecases.

Further, the thickness of the first interlayer filler layer ispreferably at least 1 μm and at most 50 μm, more preferably at least 3μm and at most 45 μm, further preferably at least 5 μm and at most 40μm. If the thickness is increased, the distance in wiring as thesemiconductor will be long, and the signal wiring delays may cause, andaccordingly the merit in formation of substrates into athree-dimensional lamination tends to be small, such being unfavorable.If the thickness is small, the distance in wiring tends to be short, andthe signal wiring delays can be reduced, however, processing will bevery difficult, including the film thickness uniformity of theinterlayer filler layer. By the thickness within the above range, bothprocessability and performance can be achieved.

Now, the respective components in the composition constituting the firstinterlayer filler layer (hereinafter sometimes referred to as a firstinterlayer filler composition) will be described in detail.

The first interlayer filler composition comprises a resin (A) and aninorganic filler (B) and as the case requires, contains a curing agent(C), a flux (D) or the like.

[Resin (A)]

The resin (A) has, in order to obtain sufficient thermal conductivitywhen combined with an inorganic filler (B) in the first interlayerfiller composition, a thermal conductivity of preferably at least 0.2W/(m·K), more preferably at least 0.22 W/(m·K). The thermal conductivityis preferably higher, but is usually at most 1.0 W/(m·K).

Further, to carry out positioning to a substrate to be bonded beforetemporary bonding after formation of a thin film on the substrate, theresin (A) has a melt viscosity at 50° C. of preferably at least 2,000Pa·s, more preferably at least 10,000 Pa·s.

Further, when main bonding is carried out after temporary bonding, inorder to melt the first interlayer filler composition by heating toconnect electric connection terminals, the resin (A) has a meltviscosity at 120° C. of preferably at most 100 Pa·s, more preferably atmost 20 Pa·s.

The resin (A) may, for example, be specifically an epoxy resin, a phenolresin, a urea resin, a melamine resin, a benzoguanamine resin, apolyester resin, an allyl resin, an alkyd resin, a urethane resin, asilicon resin, an acrylic resin or a polyimide resin. Among theseresins, preferred is a thermosetting resin excellent in the heatresistance and various electric properties. Among thermosetting resins,preferred is a resin containing an epoxy resin as the main component inview of the processability before curing, the B-stage film property andother curing properties, physical properties of a cured film, etc., andmore preferred is a resin consisting solely of an epoxy resin.

Here, “containing an epoxy resin as the main component” means that theproportion of the epoxy resin in the resin (A) is at least 50 wt %,preferably at least 60 wt % (including 100 wt %).

Now, as an example of a preferred resin as the resin (A), a case ofusing an epoxy resin will be described.

As the epoxy resin, any epoxy resin may be used. As the epoxy resin, anepoxy resin having a single type of structural units may be used alone,or a plurality of epoxy resins differing in the structural units may beused in combination.

The epoxy resin preferably contains at least the after-mentioned phenoxyresin (hereinafter referred to as epoxy resin (A1)), in order to reducevoids at the time of bonding to obtain a highly thermally conductivecured product, in addition to have coating properties or film formationproperties and bonding properties, and particularly, it preferablycontains the epoxy resin (A1) in a weight ratio based on the totalamount of the epoxy resins of preferably from 5 to 95 wt %, morepreferably from 10 to 90 wt %, further preferably from 20 to 80 wt %.

[Epoxy Resin (A1)]

A phenoxy resin usually means a resin obtainable by reacting anepihalohydrine with a dihydric phenol compound, or a resin obtainable byreacting a bivalent epoxy compound with a dihydric phenol compound, andin the present invention, among such resins, particularly a phenoxyresin which is an epoxy resin having a weight average molecular weightof at least 200 and at most 100,000 will be referred to as an epoxyresin (A1). The upper limit of the weight average molecular weight ofthe epoxy resin (A1) is preferably at most 50,000, more preferably atmost 30,000.

The epoxy resin (A1) is preferably a phenoxy resin having at least oneskeleton selected from the group consisting of a naphthalene skeleton, afluorene skeleton, a biphenyl skeleton, an anthracene skeleton, a pyreneskeleton, a xanthene skeleton, an adamantane skeleton and adicyclopentadiene skeleton. Among them, a phenoxy resin having afluorene skeleton and/or a biphenyl skeleton is particularly preferred,whereby the heat resistance is more increased.

As described above, as the epoxy resin, a plurality of epoxy resinsdiffering in the structural units may be used.

The epoxy resin other than the above epoxy resin (A1) is preferably anepoxy resin having at least two epoxy groups in its molecule(hereinafter sometimes referred to as epoxy resin (A2)). For example,various epoxy resins such as a bisphenol A type epoxy resin, a bisphenolF type epoxy resin, a naphthalene type epoxy resin, a phenol novolactype epoxy resin, a cresol novolac type epoxy resin, a phenol aralkyltype epoxy resin, a biphenyl type epoxy resin, a triphenylmethane typeepoxy resin, a dicyclopentadiene type epoxy resin, a glycidyl ester typeepoxy resin, a glycidyl amine type epoxy resin and a polyfunctionalphenol type epoxy resin may be mentioned.

They may be used alone or as a mixture of two or more.

With a view to controlling the melt viscosity, the weight averagemolecular weight of the epoxy resin (A2) is preferably from 100 to5,000, more preferably from 200 to 4,000. One having a weight averagemolecular weight lower than 100 tends to be inferior in the heatresistance, and if the weight average molecular weight is higher than5,000, the melting point of the epoxy resin tends to be high, thuslowering the bonding properties.

Further, within a range not to impair the object of the presentinvention, a resin other than the epoxy resin (A1) and the epoxy resin(A2) (hereinafter sometimes referred to as other resin) may be containedin the resin (A).

In the resin (A), the proportion of the epoxy resin (A1) in all theepoxy resins including the epoxy resin (A1) and the epoxy resin (A2) ispreferably from 3 to 95%, more preferably from 10 to 90 wt %, furtherpreferably from 20 to 80 wt % per 100 wt % of the total amount. Here,“all the resins including the epoxy resin (A1) and the epoxy resin (A2)”means the epoxy resin (A1) and the epoxy resin (A2) in total in a casewhere the resin (A) consists only of the epoxy resin (A1) and the epoxyresin (A2), and means the epoxy resin (A1), the epoxy resin (A2) andother resin in total in a case where the resin (A) further containsother resin.

By the proportion of the epoxy resin (A1) being at least 10 wt %, asufficient effect of improving the thermal conductivity by blending theepoxy resin (A1) can be obtained, and desired high thermal conductivitycan be obtained. By the proportion of the epoxy resin (A1) being lessthan 90 wt % and the proportion of the epoxy resin (A2) being at least10 wt %, the effect by blending the epoxy resin (A2) will be obtained,and sufficient curing properties and physical properties of a curedproduct will be obtained.

[Inorganic Filler (B)]

By the first interlayer filler layer containing an inorganic filler (B)having a high thermal conductivity, high thermal conductivity can beimparted to the first interlayer filler layer, whereby thermalconduction between the semiconductor substrates can be accelerated andthe temperature of the semiconductor device substrate can be lowered,and accordingly the semiconductor device can be operated stably.

The inorganic filler (B) is preferably one having high thermalconductivity, and the thermal conductivity is particularly preferably atleast 2 W/(m·K), more preferably at least 3 W/(m·K). The thermalconductivity is preferably higher, but is usually at most 300 W/(m·K).

The dielectric constant of the inorganic filler (B) is preferably atmost 6, more preferably at most 5. If the dielectric constant exceeds 6,the signal transmission delays in wiring between the substrates mayoccur, thus leading to a decrease in the operating speed of the entiredevice, such being unfavorable. The dielectric constant is preferablylower, but is usually at least 3.

When the dielectric constant is at most 6, preferably at most 5, thesignal transmission delays can be reduced, and the operation speed ofthe semiconductor device can be improved.

The dielectric constant of the inorganic filler (B) can be measured byan optional method, and is commonly obtained by sandwiching a samplebetween metal electrodes and measuring the capacity and the dielectricdissipation factor.

To measure the dielectric constant, an optional frequency may beemployed, and it is preferred to employ a frequency of 10 MHz in view ofthe measurement accuracy. Further, along with speeding up of theoperating frequency of a semiconductor, it is more preferred to employ afrequency of from 100 MHz to 10 GHz to measure the dielectric constant.

The inorganic filler (B) may, for example, be alumina (Al₂O₃, thermalconductivity: W/(m·K)), aluminum nitride (AlN, thermal conductivity: 260W/(m·K)), boron nitride (BN, thermal conductivity: 3 W/(m·K) (thicknessdirection), 275 W/(m·K) (in-plane direction), silicon nitride (Si₃N₄,thermal conductivity: 23 W/(m·K)) or silica (SiO₂, thermal conductivity:1.4 W/(m·K)).

The inorganic filler (B) preferably further has stability againstoxygen, water and exposure to high temperature, and a low dielectricproperty, in view of the reliability of a device formed by lamination.Such an inorganic filler (B) is preferably Al₂O₃, AlN, BN or SiO₂,especially preferably BN. Such inorganic fillers (B) may be used aloneor as a mixture of at least two in optional combination and proportion.

If the inorganic material used as the inorganic filler (B) is acommercially available product or may be immediately after preparation,the powder aggregates in some cases. Accordingly, the inorganic materialused as the inorganic filler (B) is preferably ground to an appropriateparticle size.

The method of grinding the inorganic material is not particularlylimited, and a method of stirring and mixing it with grinding media suchas zirconia beads, or a known grinding method such as jet spraying maybe employed.

The inorganic filler (B) preferably has an average particle size of atleast 0.1 μm and at most 10 μm and a specific surface area of at least 1m²/g and at most 60 m²/g, more preferably has an average particle sizeof at least 0.2 μm and at most 5 μm and a specific surface area of atleast 1 m²/g and at most 25 m²/g, particularly preferably has an averageparticle size of at least 0.2 μm and at most 3 μm and a specific surfacearea of at least 1 m²/g and at most 15 m²/g.

The average particle size of the inorganic filler (B) is a valuemeasured after grinding, and the specific surface area is a valuemeasured before grinding. Specific methods for measuring the averageparticle size and the specific surface area of the inorganic filler (B)are described in Examples.

Further, the maximum particle size of the inorganic filler (B) ispreferably 20 μm (that is, all the particles of the inorganic filler (B)are 20 μm or smaller), more preferably 10 μm.

The inorganic filler (B) may be properly subjected to surface treatmentto increase the dispersability in the resin (A) or in the coating fluid.Further, an inorganic filler subjected to heat treatment may be used soas to increase the crystallinity or to remove moisture.

In the highly integrated three-dimensional integrated circuit laminate,the thickness of the first interlayer filler layer is so small as atmost 50 μm. Accordingly, if the average particle size of the inorganicfiller to be blended exceeds 10 μm, the inorganic filler is likely toprotrude on the surface, whereby the surface state of the firstinterlayer filler layer tends to be deteriorated, the bonding propertiesof the interlayer filler composition will be lowered, and thesemiconductor substrates cannot sufficiently be bonded.

On the other hand, if the particle size of the inorganic filler (B) istoo small, the number of necessary thermally conductive paths isincreased, whereby the possibility of the thermally conductive pathsbeing connected from top to bottom in the thickness direction betweenthe semiconductor substrates tends to be low, and the thermalconductivity in the thickness direction of the interlayer filler layermay be insufficient even if combined with the epoxy resin (A) havinghigh thermal conductivity. Further, if the particle size of theinorganic filler (B) is too small, the inorganic filler (B) is likely toaggregate, thus deteriorating the dispersability in the interlayerfiller composition.

Further, if the specific surface area is less than 1 m²/g, the particlesize of the inorganic filler (B) tends to be large, whereby bonding willbe difficult, and if it exceeds 60 m²/g, the particle size of theinorganic filler (B) tends to be too small, and the above problem ofaggregation may arise, or the shape of the inorganic filler (B) willsignificantly depart from a spherical shape, and accordingly theviscosity of the interlayer filler composition will be increased, andthe amount of the filler in the interlayer filler layer cannot beincreased, and predetermined thermal conductivity cannot be achieved.

By the average particle size and the specific surface area of theinorganic filler (B) being within the above ranges, excessiveaggregation of the inorganic filler particles can be suppressed, and asufficient amount of the inorganic filler can be contained, whereby aninterlayer filler layer having a sufficient thermal conductivity in thethickness direction can be obtained.

Further, as the inorganic filler (B), at least two types of inorganicfillers differing in the average particle size may be used. For example,by using an inorganic filler having a relatively small average particlesize of, for example, from 0.1 to 3 μm, preferably from 0.2 to 1.5 μm,and an inorganic filler having a relatively large average particle sizeof, for example, from 1 to 10 μm, preferably from 1 to 5 μm, incombination, the thermally conductive paths of the inorganic fillerparticles having a large average particle size are connected by theinorganic filler having a small average particle size, whereby highfilling becomes possible as compared with a case of using only onehaving a single average particle size, and higher thermal conductivitycan be obtained.

In such a case, it is preferred to use an inorganic filler having asmall average particle size and an inorganic filler having a largeaverage particle size in a weight ratio of from 10:1 to 1:10, in view offormation of thermally conductive paths.

The first interlayer filler composition may contain a filler other thanthe inorganic filler (B) (hereinafter referred to as other filler) forthe purpose of adjusting the viscosity or for another purpose, within arange not to impair the effects of the present invention.

For example, in a case where the filler is added for the purpose ofadjusting the viscosity, not for the purpose of improving the thermalconductivity, silica (SiO₂, thermal conductivity: 1.4 W/(m·K)) which isa general purpose filler, the thermal conductivity of which is not sohigh, may be used.

The average particle size and the maximum particle size of such otherfiller are preferably within the same range as the inorganic filler (B).

The content of the inorganic filler (A) in the first interlayer fillerlayer is preferably at least 50 parts by weight and at most 400 parts byweight, more preferably at least 75 parts by weight and at most 300parts by weight, per 100 parts by weight of the resin (A). If thecontent of the inorganic filler (B) is less than 50 parts by weight, nosufficient thermal conductivity will be obtained in some cases, and ifit exceeds 400 parts by weight, the viscosity of the composition tendsto be high, whereby a problem such that no uniform coating film can beformed may arise.

[Curing Agent (C)]

The first interlayer filler composition may contain a curing agent (C).The curing agent (C) used in the present invention is, in a case wherean epoxy resin is used, a substance which contributes to thecrosslinking reaction between epoxy groups of the epoxy resin.

The curing agent (C) is not particularly limited, and all the knownepoxy resin curing agents may be used. It may, for example, be a phenoltype curing agent, an amine type curing agent such as an aliphaticamine, a polyether amine, an alicyclic amine or an aromatic amine, anacid anhydride type curing agent, an amide type curing agent, a tertiaryamine, imidazole or a derivative thereof, an organic phosphine, aphosphonium salt, a tetraphenylborate salt, an organic acid dihydrazide,a boron halide amine complex, a polymercaptan type curing agent, anisocyanate type curing agent or a blocked isocyanate type curing agent.

The phenol type curing agent may, for example, be specifically bisphenolA, bisphenol F, 4,4′-dihydroxy diphenyl methane, 4,4′-dihydroxy diphenylether, 1,4-bis(4-hydroxyphenoxy)benzene,1,3-bis(4-hydroxyphenoxy)benzene, 4,4′-dihydroxy diphenyl sulfide,4,4′-dihydroxy diphenyl ketone, 4,4′-dihydroxy diphenyl sulfone,4,4′-dihydroxybiphenyl, 2,2′-dihydroxybiphenyl,10-(2,5-dihydroxyphenyl)-10H-9-oxa-10-phosphaphenanthrene-10-oxide,phenol novolak, bisphenol A novolak, o-cresol novolak, m-cresol novolak,p-cresol novolak, xylenol novolak, poly-p-hydroxystyrene, hydroquinone,resorcin, catechol, t-butylcatechol, t-butylhydroquinone,phloroglucinol, pyrogallol, t-butylpyrogallol, allylated pyrogallol,polyallylated pyrogallol, 1,2,4-benzenetriol,2,3,4-trihydroxybenzophenone, 1,2-dihydroxynaphthalene,1,3-dihydroxynaphthalene, 1,4-dihydroxynaphthalene,1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene,1,7-dihydroxynaphthalene, 1,8-dihydroxynaphthalene,2,3-dihydroxynaphthalene, 2,4-dihydroxynaphthalene,2,5-dihydroxynaphthalene, 2,6-dihydroxynaphthalene,2,7-dihydroxynaphthalene, 2,8-dihydroxynaphthalene, an allylated productor polyallylated product of the above dihydroxynaphthalene, allylatedbisphenol A, allylated bisphenol F, allylated phenol novolak orallylated pyrogallol.

As the amine type curing agent, the aliphatic amine may, for example, bespecifically ethylenediamine, 1,3-diaminopropane, 1,4-diaminopropane,hexamethylenediamine, 2,5-dimethylhexamethylenediamine,trimethylhexamethylenediamine, diethylenetriamine, iminobispropylamine,bis(hexamethylene)triamine, triethylenetetramine,tetraethylenepentamine, pentaethylenehexamine,N-hydroxyethylethylenediamine or tetra(hydroxyethyl)ethylenediamine.

The polyether amine may, for example, be specifically triethylene glycoldiamine, tetraethylene glycol diamine, diethylene glycolbis(propylamine), polyoxypropylene diamine or polyoxypropylene triamine.

The alicyclic amine may, for example, be specifically isophoronediamine, menthenediamine, N-aminoethylpiperazine,bis(4-amino-3-methyldicyclohexyl)methane, bis(aminomethyl)cyclohexane,3,9-bis(3-aminopropyl)-2,4,8,10-tetraoxaspiro(5,5)undecane ornorbornenediamine.

The aromatic amine may, for example, be specificallytetrachloro-p-xylene diamine, m-xylene diamine, p-xylene diamine,m-phenylenediamine, o-phenylenediamine, p-phenylenediamine,2,4-diaminoanisole, 2,4-toluenediamine, 2,4-diaminodiphenylmethane,4,4′-diaminodiphenylmethane, 4,4′-diamino-1,2-diphenylethane,2,4-diaminodiphenylsulfone, 4,4′-diaminodiphenylsulfone, m-aminophenol,m-aminobenzylamine, benzyldimethylamine, 2-dimethylaminomethyl)phenol,triethanolamine, methylbenzylamine, α-(m-aminophenyl)ethylamine,α-(p-aminophenyl)ethylamine, diaminodiethyldimethyldiphenylmethane orα,α′-bis(4-aminophenyl)-p-diisopropylbenzene.

The acid anhydride type curing agent may, for example, be specificallydodecenyl succinic anhydride, polyadipic anhydride, polyazelaicanhydride, polysebacic anhydride, poly(ethyloctadecanedioic) anhydride,poly(phenylhexadecanedioic) anhydride, methyltetrahydrophthalicanhydride, methylhexahydrophthalic anhydride, hexahydrophthalicanhydride, methylhimic anhydride, tetrahydrophthalic anhydride,trialkyltetrahydrophthalic anhydride, methylcyclohexane dicarboxylicanhydride, methylcyclohexanetetracarboxylic anhydride, phthalicanhydride, trimellitic anhydride, pyromellitic anhydride,benzophenonetetracarboxylic anhydride, ethylene glycol bistrimellitatedianhydride, HET anhydride, Nadic anhydride, methyl Nadic anhydride,5-(2,5-dioxotetrahydro-3-furanyl)-3-methyl-3-cyclohexane-1,2-dicarboxylicanhydride, 3,4-dicarboxy-1,2,3,4-tetrahydro-1-naphthalene succinicdianhydride, or 1-methyl-dicarboxy-1,2,3,4-tetrahydro-1-naphthalenesuccinic dianhydride.

The amide type curing agent may, for example, be dicyandiamide or apolyamide resin.

The tertiary amine may, for example, be1,8-diazabicyclo(5,4,0)undecene-7, triethylenediamine,benzyldimethylamine, triethanolamine, dimethylaminoethanol ortris(dimethylaminomethyl)phenol.

The imidazole or its derivative may, for example, be1-cyanoethyl-2-phenylimidazole, 2-phenylimidazole,2-ethyl-4(5)-methylimidazole, 2-phenyl-4-methylimidazole,1-benzyl-2-methylimidazole, 1-benzyl-2-phenylimidazole,1-cyanoethyl-2-undecylimidazole, 1-cyano-2-phenylimidazole,1-cyanoethyl-2-undecylimidazole trimellitate,1-cyanoethyl-2-phenylimidazolium trimellitate,2,4-diamino-6-[2′-methylimidazolyl-(1′)]-ethyl-s-triazine,2,4-diamino-6-[2′-ethyl-4′-methylimidazolyl-(1)]-ethyl-s-triazine,2,4-diamino-6-[2′-methylimidazolyl-(1′)]-ethyl-s-triazine isocyanuricacid adduct, 2-phenylimidazole isocyanuric acid adduct,2-phenyl-4,5-dihydroxymethylimidazole,2-phenyl-4-methyl-5-hydroxymethylimidazole or an adduct of an epoxyresin with the above imidazole.

The organic phosphine may, for example, be tributylphosphine,methyldiphenylphosphine, triphenylphosphine, diphenylphosphine orphenylphosphine.

The phosphonium salt may, for example, be tetraphenylphosphoniumtetraphenylborate, tetraphenylphosphonium ethyltriphenylborate ortetrabutylphosphonium tetrabutylborate.

The tetraphenylborate salt may, for example, be2-ethyl-4-methylimidazole tetraphenylborate or N-methylmorpholinetetraphenylborate.

The above curing agents may be used alone or as a mixture of at leasttwo in optional combination and proportion.

Among the above curing agents, the imidazole or its derivative, or theamide type curing agent is suitably used.

In a case where as the after-mentioned flux (D), an organic carboxylicacid or an organic carboxylate having a function to cure the epoxy resinis used, such an organic carboxylic acid or carboxylate may be used asthe curing agent (C).

The content of the curing agent (C) in the first interlayer fillercomposition is usually preferably from 0.1 to 60 parts by weight, morepreferably from 0.5 to 10 parts by weight per 100 parts by weight of theresin (A) containing the epoxy resin as the main component.

Here, in a case where the curing agent is a phenol type curing agent, anamine type curing agent or an acid anhydride type curing agent, it ispreferably used so that the equivalent ratio of the functional groups inthe curing agent and the epoxy groups in the epoxy resin is within arange of from 0.8 to 1.5, more preferably from 0.9 to 1.2. If it is outof this range, unreacted epoxy groups or functional groups in the curingagent may remain, whereby no desired physical properties may beobtained.

Further, in a case where the curing agent is an amide type curing agent,a tertiary amine, an imidazole or its derivative, an organic phosphine,a phosphonium salt, a tetraphenylborate salt, an organic aciddihydrazide, a boron halide amine complex, a polymercaptan type curingagent, an isocyanate type curing agent, a blocked isocyanate type curingagent or the like, it is preferably used in an amount of from 0.1 to 20parts by weight, more preferably from 0.5 to 10 parts by weight per 100parts by weigh of the epoxy resin in the epoxy resin composition.

[Flux (D)]

The flux (D) is specifically a compound which has functions to dissolveand remove the surface oxide film on metal electric signal terminalssuch as solder bumps and lands, to improve the wettability on the landsurface of the solder bumps and further, to prevent re-oxidation on themetal terminal surface of the solder bumps, at the time of solderbonding of the metal terminals. The flux (D) is contained in the firstinterlayer filler composition in a case where solder connectionterminals for electric signal connection between the semiconductorsubstrates each having a semiconductor device layer formed thereon areincluded in the first interlayer filler layer.

The flux (D) may, for example, be an aliphatic carboxylic acid such asoxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid,malic acid, tartaric acid, citric acid, lactic acid, acetic acid,propionic acid, butyric acid, oleic acid or stearic acid; an aromaticcarboxylic acid such as benzoic acid, salicylic acid, phthalic acid,trimellitic acid, trimellitic anhydride, trimesic acid orbenzenetetracarboxylic acid; a terpene carboxylic acid such as abieticacid or rosin; an organic carboxylate which is a hemiacetal ester havingan organic carboxylic acid converted by reaction with an alkyl vinylether; an organic halogen compound such as glutamic acid hydrochloride,aniline hydrochloride, hydrazine hydrochloride, cetyl pyridine bromide,phenylhydrazine hydrochloride, tetrachloronaphthalene, methylhydrazinehydrochloride, methylamine hydrochloride, ethylamine hydrochloride,diethylamine hydrochloride or butylamine hydrochloride; an amine such asurea or diethylene triamine hydrazine; a polyhydric alcohol such asethylene glycol, diethylene glycol, triethylene glycol, tetraethyleneglycol, hexaethylene glycol, glycerin, trimethylolethane,trimethylolpropane, 2,3,4-trihydroxybenzophenone, triethanolamine,erythritol, pentaerythritol,bis(2-hydroxymethyl)iminotris-(hydroxymethyl)methane or ribitol; aninorganic acid such as hydrochloric acid, hydrofluoric acid, phosphoricacid or fluoroboric acid; a fluoride such as potassium fluoride, sodiumfluoride, ammonium fluoride, copper fluoride, nickel fluoride or zincfluoride, a chloride such as potassium chloride, sodium chloride,cuprous chloride, nickel chloride, ammonium chloride, zinc chloride orstannous chloride; or a bromide such as potassium bromide, sodiumbromide, ammonium bromide, tin bromide or zinc bromide. These compoundsmay be used as they are or may be used in the form of microcapsulesusing a covering agent of e.g. an organic polymer or an inorganiccompound. These compounds may be used alone or as a mixture of at leasttwo in optional combination and proportion.

Among them, in view of the solubility in the resin (A) or varioussolvents, preferred is a polyhydric alcohol, an organic carboxylic acidor a carboxylate.

The melt temperature of the flux (D) is preferably from 90° C. to 220°C., more preferably from 100° C. to 200° C., further preferably from120° C. to 180° C., in order to fulfill functions to dissolve the oxidefilm on the solder surface before solder bonding, to improve thewettability on the solder surface, and to prevent re-oxidation of thesolder surface.

Further, in a case where the flux (D) is a polyhydric alcohol, anorganic carboxylic acid or a carboxylate, preferred is one which is lesslikely to be decomposed, or volatilized or evaporated, at a temperatureof from 220 to 260° C. at the time of solder bonding. In such a case,the decomposition temperature and the boiling point are preferably atleast 250° C., more preferably at least 270° C., most preferably atleast 290° C.

The polyhydric alcohol is preferably trimethylolpropane, erythritol,pentaerythritol or ribitol.

The organic carboxylic acid is preferably glutaric acid, adipic acid ortrimellitic acid.

The temperature at which the organic carboxylate is thermally decomposedto form a carboxylic acid thereby to fulfill the functions, ispreferably at least 130° C., more preferably at least 140° C., furtherpreferably at least 160° C., most preferably at least 180° C. Thetemperature is preferably higher, but is usually preferably at most 200°C.

As the organic carboxylic acid as the material of the organiccarboxylate, a monocarboxylic acid such as lactic acid, acetic acid,propionic acid, butyric acid, oleic acid, stearic acid, benzoic acid,abietic acid or rosin; a dicarboxylic acid such as oxalic acid, malonicacid, succinic acid, glutaric acid, adipic acid, malic acid, tartaricacid, isophthalic acid, pyromellitic acid, maleic acid, fumaric acid oritaconic acid; a tricarboxylic acid such as citric acid,1,2,4-trimellitic acid or tris(2-carboxyethyl)isocyanurate; or atetracarboxylic acid such as pyromellitic acid or butane tetracarboxylicacid may, for example, be used. Among them, in view of the reactivity asthe flux, preferred is a polycarboxylic acid having at least two carboxygroups.

Further, as the alkyl vinyl ether as the material of the organiccarboxylate, preferred is one having a C₁₋₆ alkyl group, particularlypreferably one wherein the alkyl group is a methyl group, an ethylgroup, a propyl group or a butyl group. Among these alkyl groups,preferred is a secondary or primary alkyl group, since the lower theelectron-donating properties of an alkyl group, the higher the hightemperature dissociation properties.

Among such organic carboxylates, Santacid G (dialkyl vinyl ether blockbifunctional polymer type carboxylic acid), Santacid H (monoalkyl vinylether block bifunctional low molecular weight type carboxylic acid),Santacid I (monoalkyl vinyl ether block bifunctional carboxylic acid)(each manufactured by NOF Corporation), and the like may be preferablyused.

The content of the flux (D) is at least 0.1 part by weight and at most10 parts by weight, preferably at least 0.5 part by weight and at most 5parts by weight per 100 parts by weight of the resin (A). If the contentis less than 0.1 part by weight, solder connection failure may occur dueto a decrease in the oxide film removability, and if it exceeds 10 partsby weight, connection failure may occur due to an increase in theviscosity of the composition.

The first interlayer filler composition may contain various otheradditives for the purpose of further improving its functions, within arange not to impair the effects of the present invention.

Such other additives may, for example, be a coupling agent such as asilane coupling agent or a titanate coupling agent, as an additivecomponent to improve the bonding property to a substrate or the bondingproperty between the matrix resin and the inorganic filler, anultraviolet inhibitor to improve the storage stability, an antioxidant,a plasticizer, a flame retardant, a coloring agent or a dispersingagent.

Each of these additives may be used alone or as a mixture of at leasttwo in optional combination and proportion.

Among the above additives, with a view to improving the adhesion betweenthe resin component and the inorganic filler (B), a coupling agent ispreferably contained.

A silane coupling agent may, for example, be an epoxysilane such asγ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane orβ-(3,4-epoxycyclohexyl)ethyltrimethoxysilane; an aminosilane such asγ-aminopropyltriethoxysilane,N-β(aminoethyl)γ-aminopropyltrimethoxysilane,N-β(aminoethyl)γ-aminopropylmethyldimethoxysilane,γ-aminopropyltrimethoxysilane or γ-ureido propyltriethoxysilane; amercaptosilane such as 3-mercaptopropyltrimethoxysilane; a vinylsilanesuch as p-styryltrimethoxysilane, vinyltrichlorosilane,vinyltris(β-methoxyethoxy)silane, vinyltrimethoxysilane,vinyltriethoxysilane or γ-methacryloxypropyltrimethoxysilane, or apolymer type silane such as an epoxy type, an amino type or a vinyltype.

Further, a titanate coupling agent may, for example, beisopropyltriisostearoyl titanate,isopropyltri(N-aminoethyl-aminoethyl)titanate, diisopropylbis(dioctylphosphate)titanate, tetraisopropylbis(dioctyl phosphite)titanate,tetraoctylbis(ditridecyl phosphite)titanate,tetra(2,2-diallyloxymethyl-1-butyl)bis(ditridecyl)phosphite titanate,bis(dioctyl pyrophosphate)oxyacetate titanate or bis(dioctylpyrophosphate)ethylene titanate.

The amount of such other additives is not particularly limited, and theyare used in amounts for a conventional resin composition to such anextent that necessary functions are obtained.

Among such other additives, the addition amount of the coupling agent ispreferably from about 0.01 to about 2.0 wt %, more preferably from 0.1to 1.5 wt % to the total solid content in the resin composition. If theamount of the coupling agent is small, no sufficient effect of improvingthe adhesion between the matrix resin and the inorganic filler byblending the coupling agent may be obtained, and if it is too large, thecoupling agent may bleed out from the obtainable cured product.

[Organic Solvent (E)]

To form the first interlayer filler layer, the above-described firstinterlayer filler composition may be applied as it is on thesemiconductor substrate, or may be used in the form of a coating fluidcontaining an organic solvent (E). Now, the organic solvent (E) will bedescribed.

The organic solvent (E) which can be used may, for example, be a ketonesuch as acetone, methyl ethyl ketone (MEK), methyl isobutyl ketone(MIBK), methyl amyl ketone (MAK) or cyclohexanone (CHN), an ester suchas ethyl acetate or butyl acetate; an ether such as ethylene glycolmonomethyl ether, propylene glycol monomethyl ether or propylene glycolmonomethyl ether acetate; an amide such as N,N-dimethylformamide orN,N-dimethylacetamide; an alcohol such as methanol or ethanol; an alkanesuch as hexane or cyclohexane; or an aromatic compound such as tolueneor xylene.

Among them, considering the solubility of the resin, the boiling pointof the solvent, and the like, preferred is a ketone such as methyl ethylketone, methyl isobutyl ketone or cyclohexanone, an ester or an ether,particularly preferred is a ketone such as methyl ethyl ketone, methylisobutyl ketone or cyclohexanone.

Such organic solvents may be used alone or as a mixture of at least twoin optional combination and proportion.

The mixing ratio of the organic solvent (E) to the other components isnot particularly limited, but is preferably at least 20 wt % and at most70 wt %, particularly preferably at least 30 wt % and at most 60 wt % tothe other composition. By using the coating fluid of the presentinvention having such a mixing ratio, a favorable coating film can beformed by an optional coating method.

If the mixing ratio of the organic solvent (E) is less than 20 wt %, theviscosity of the composition tends to increase, and no favorable coatingfilm may be obtained in some cases, and if it exceeds 70 wt %, problemsmay arise such that no predetermined film thickness will be obtained.

The coating fluid may contain various additives.

Such additives may, for example, be the above-described additives, and asurfactant to improve the dispersibility of the respective components inthe coating fluid, an emulsifier, an elasticity-lowering agent, adiluent, an antifoaming agent or an ion trapping agent.

As the surfactant, any one of known anionic surfactant, nonionicsurfactant and cationic surfactant may be used.

For example, a polyoxyethylene alkyl ether, a polyoxyethylene alkyl arylether, a polyoxyethylene alkyl ester, a sorbitan alkyl ester, amonoglyceride alkyl ester, an alkylbenzene sulfonate, analkylnaphthalene sulfonate, an alkyl sulfate, an alkyl sulfonate, asulfosuccinate, an alkylbetain or an amino acid may, for example, bementioned.

Further, a fluorinated surfactant having some or all of C—H bonds insuch a surfactant converted to C—F bonds may also be preferably used.

The amount of addition of the surfactant is preferably from about 0.001to 5 wt %, more preferably from 0.01 to 1 wt % to all the solid contentin the resin composition. If it is less than 0.001 wt %, no desired filmthickness uniformity may be obtained in some cases, and if it exceeds 5wt %, phase separation with the resin component may occur in some cases,such being unfavorable.

The method for preparing the coating fluid is not particularly limited,a known method may be employed, and the coating fluid can be prepared bymixing the constituting components for the coating fluid as they are.

Unless there are some special problems such as the reaction by theadditives or the like or formation of precipitates by addition of theadditives, the order of mixing the respective components is optional,and any two or more components among the components constituting thecoating fluid may be preliminarily blended and then the other componentsare mixed, or all the components may be mixed all at once.

As described above, the inorganic filler (B) is preferably ground sothat the inorganic filler (B) is not in the form of aggregates havinglarge particle sizes, and it may be ground before production of thecoating fluid, or may be ground after mixed with other components. Themethod of grinding the inorganic material is not particularly limited,and a conventional grinding method may be employed.

(1-3) First Three-Dimensional Integrated Circuit Laminate

The first three-dimensional integrated circuit laminate comprising thesemiconductor substrate laminate is produced by a process comprising astep of forming a coating film of the first interlayer fillercomposition to be a precursor of the first interlayer filler layer oneach of the semiconductor substrates each having a semiconductor layerformed thereon, constituting the respective layers of thethree-dimensional integrated circuit, and a step of subjecting thesesemiconductor substrates by pressure bonding to form a semiconductorsubstrate laminate having first interlayer filler layers between thesemiconductor substrates.

Now, the respective steps will be specifically described.

First, on the upper side and the lower side of each semiconductorsubstrate having a semiconductor device layer formed thereon, solderbumps and land terminals as electric connection terminals betweensubstrates are formed as the case requires. The semiconductor substrate,the solder bumps and the land terminals are as described above.

Then, a coating film of the interlayer filler composition is formed onthe semiconductor substrate.

The coating film of the first interlayer filler composition can beformed by applying the first interlayer filler composition dissolved ordispersed in the organic solvent (E) by a dipping method, a spin coatingmethod, a spray coating method, a blade coating method or anotheroptional method. To remove the solvent and low molecular weightcomponents from the obtained coating film, baking treatment is carriedout at an optional temperature of from 50 to 150° C., preferably from 60to 130° C. to form a coating film, followed by B-stage formation as thecase requires. On that occasion, a baking treatment may be carried outat a constant temperature, or a baking treatment may be carried outunder reduced pressure conditions so that removal of volatile componentsin the composition smoothly proceeds. Further, within a range wherecuring of the resin does not proceed, a baking treatment by stepwisetemperature increase may be carried out. For example, a baking treatmentinitially at 60° C., then at 80° C. and further at 120° C. each for fromabout 5 to about 90 minutes may be carried out.

Further, the first interlayer filler composition containing no organicsolvent (E) may be used as it is. For example, using the interlayerfiller composition heated and melted within a temperature range withinwhich curing of the resin does not start, a film of the first interlayerfiller composition may be formed on the semiconductor substrate by anoptional method.

Further, since the first interlayer filler composition has sufficientextensibility suitable for film formation, the interlayer fillercomposition may be formed into a film, and the film is placed on thesemiconductor substrate.

Then, the film comprising the first interlayer filler composition formedby the above method is heated to develop tack properties, and temporaryboding to a semiconductor substrate to be bonded is carried out. Thetemporary boding temperature depends on the composition of the resin (A)and is preferably from 80 to 150° C. In a case where a plurality ofsemiconductor substrates are to be bonded, temporary bonding may berepeatedly carried out for the respective substrates, or a plurality ofsubstrates having the coating film formed thereon are overlaid, and theyare temporarily bonded by heating all together. For the temporaryboding, as the case requires, a load of preferably from 1 gf/cm² to 50Kgf/cm², more preferably from 10 gf/cm² to 10 Kgf/cm² is preferablyapplied to the substrates.

After the temporary boding, main bonding of the semiconductor substratesis carried out. The temporarily boded semiconductor substrates arepressure bonded at 200° C. or higher, preferably at 220° C. or higher,whereby the melt viscosity of the resin in the first interlayer fillercomposition is lowered to accelerate connection of electric terminalsbetween the semiconductor substrates and at the same time, the flux inthe composition is activated to realize solder bonding between thesemiconductor substrates. The upper limit of the heating temperature isa temperature at which the resin (A) used is not decomposed ordenatured, is properly determined by the type and the grade of theresin, and is usually at most 300° C.

Further, at the time of pressure bonding, as the case requires, a loadof preferably from 10 gf/cm² to 10 Kgf/cm², more preferably from 50gf/cm² to 5 Kgf/cm² is preferably applied to the substrates.

(2) Second Three-Dimensional Integrated Circuit Laminate

In the second three-dimensional integrated circuit laminate of thepresent invention, the above-described semiconductor substrate laminateis further mounted on an organic substrate, and between thesemiconductor substrate laminate and the organic substrate, a secondinterlayer filler layer containing a resin (a) and an inorganic filler(b) may be formed.

That is, the second three-dimensional integrated circuit laminate is athree-dimensional integrated circuit laminate wherein theabove-described semiconductor substrate laminate (the firstthree-dimensional integrated circuit laminate) is further mounted on anorganic substrate, and a second interlayer filler layer containing aresin (a) and an inorganic filler (b) is formed between thesemiconductor substrate laminate and the organic substrate.

In FIG. 3, a cross-sectional view conceptually illustrating athree-dimensional integrated circuit laminate according to a secondembodiment of the present invention (hereinafter referred to as a secondthree-dimensional integrated circuit laminate). In FIG. 3, for easyunderstanding of the structure of the three-dimensional integratedcircuit laminate, the thickness and the size of constituents relative tothe semiconductor substrates and the organic substrate are indicatedlarger than the actual sizes.

As shown in FIG. 3, in a second three-dimensional integrated circuitlaminate 100, the above-described semiconductor substrate laminate 1 isfurther mounted on an organic substrate 101, and between thesemiconductor substrate laminate and the organic substrate, a secondinterlayer filler layer 102 containing a resin (a) and an inorganicfiller (b) is formed.

Now, the second three-dimensional integrated circuit laminate will bedescribed in detail. Description for the semiconductor substratelaminate is omitted since it is the same as the above-described firstthree-dimensional integrated circuit laminate.

(2-1) Organic Substrate

The organic substrate is a pattern conversion substrate (interposer) forhigh density packaging to connect an electrode array employing solderballs as external electrodes to a semiconductor substrate, and ispreferably an organic substrate having a multilayer circuit structurehaving a wiring layer in a resin plate, so as to secure the conformityin the thermal expansion with a printed circuit board or a flexiblesubstrate at the time of packaging of the three-dimensional integratedcircuit laminate. An epoxy resin or the like is preferably used as aresin component constituting the organic substrate, and copper (Cu) ispreferably used as a wiring layer. The semiconductor substrate laminatemounted on a printed circuit board via the second interlayer fillerlayer, may be connected to the organic substrate via the solder bumps orthe like, and the organic substrate may be electrically connected toterminals of the printed circuit board via the electrode array.

(2-2) Second Interlayer Filler Layer

The second interlayer filler layer is formed between the semiconductorsubstrate laminate and the organic substrate and contains a resin (a)and an inorganic filler (b).

The second interlayer filler layer has a coefficient of linear thermalexpansion of preferably at least 10 ppm/K and at most 50 ppm/K,particularly preferably at most 15 ppm/K. The coefficient of linearthermal expansion is preferably lower, but is usually at least 20 ppm/K.

When the coefficient of linear thermal expansion is at least 10 ppm/Kand at most 50 ppm/K, a stress formed due to a difference in thecoefficient of expansion by heat between the semiconductor substratelaminate and the organic substrate will be relaxed, and separation atthe bonding interface between the semiconductor substrate laminate andthe organic substrate can be avoided.

The dielectric constant of the second interlayer filler layer ispreferably at most 6, more preferably at most 5, particularly preferablyat most 4.5. The dielectric constant is preferably lower, but is usuallyat least 3.

If the dielectric constant exceeds 6, the signal transmission delays inwiring between the semiconductor substrate laminate and the organicsubstrate may occur, thus leading to a decrease in the operating speedof the entire device, such being unfavorable. When the dielectricconstant is at most 6, preferably at most 5, the above signaltransmission delays can be reduced, and the operation speed of asemiconductor device can be improved.

Of the second interlayer filler layer, the thermal conductivity ispreferably at least 0.4 W/(m·K), more preferably at least 0.8 W/(m·K),particularly preferably at least 1.0 W/(m·K). The thermal conductivityis preferably higher, and is usually at most 10 W/(m·K).

The difference in the coefficient of thermal expansion between thesemiconductor substrate laminate and the organic substrate becomessignificant as the temperature becomes high, and when the thermalconductivity of the second interlayer filler layer is at least 0.4W/(m·K), heat generated will sufficiently be transmitted to the organicsubstrate via the second interlayer filler layer, whereby operationfailure due to accumulation of heat in the semiconductor substratelaminate can more securely be avoided and in addition, the stress formeddue to a difference in the coefficient of expansion will be relaxed.

The thickness of the second interlayer filler layer is preferably atleast 50 μm and at most 300 μm, more preferably at least 60 μm and atmost 250 μm, further preferably at least 70 μm and at most 200 μm.

If the thickness increases, the laminate of the semiconductor substratelaminate and the organic substrate tends to be bulky, and smallpackaging will be difficult, such being unfavorable. Further, if thethickness is small, due to a difference in the coefficient of expansionbetween the semiconductor substrate laminate and the organic substrateby a change in the operating temperature of the device, e.g. separationat the bonding interface between the inorganic and organic substratesmay occur, such being unfavorable. By the above thickness, bothprocessability and performance can be satisfied.

Now, the respective components in a composition comprising the secondinterlayer filler layer (hereinafter sometimes referred to as a secondinterlayer filler composition) will be described.

The second interlayer filler composition comprises a resin (a) and aninorganic filler (b) and as the case requires, contains a curing agent(c), a flux (d) or the like.

Detailed description of the constituents in the second interlayer fillercomposition which are the same as in the first interlayer fillercomposition is omitted.

[Resin (a)]

Of the resin (a), the thermal conductivity is preferably at least 0.15W/(m·K), more preferably at least 0.3 W/(m·K), in order that sufficientthermal conductivity is obtained when combined with the inorganic filler(b) as the second interlayer filler composition. The thermalconductivity is preferably higher, but is usually at most 0.5 W/(m·K).

Further, the resin (a) has a melt viscosity at 50° C. of preferably atleast 2,000 Pa·s, more preferably at least 10,000 Pa·s to carry outpositioning to a substrate to be bonded before temporary bonding afterformation of a thin film on the substrate.

Further, when main bonding is carried out after temporary bonding, inorder to melt the first interlayer filler composition by heating toconnect electric connection terminals, the resin (a) has a meltviscosity at 120° C. of preferably at most 100 Pa·s, more preferably atmost 20 Pa·s.

The resin (a) may, for example, be specifically an epoxy resin, a phenolresin, a urea resin, a melamine resin, a benzoguanamine resin, apolyester resin, an allyl resin, an alkyl resin, a urethane resin, asilicon resin, an acrylic resin or a polyimide resin.

Further, as the resin (a), the above resin (A) of the first interlayerfiller composition may be used.

Among such resins, preferred is a thermosetting resin excellent in theheat resistance and various electric properties. Among thermosettingresins, preferred is a resin containing an epoxy resin as the maincomponent in view of the processability before curing, other curingproperties, physical properties of a cured film, etc. Here, “containingan epoxy resin as the main component” means that the proportion of theepoxy resin in the resin (a) is at least 50 wt %, preferably at least 60wt % (including 100 wt %).

As a technique to fill a space between a silicon substrate and anorganic substrate, commonly an underfilling process has been proposed,by which the space is filled with an interlayer filler from the side ofthe substrates by employing capillarity after bonding the bumps andlands. Accordingly, in this process, a resin component which is liquidat room temperature is necessary, and usually, a liquid epoxy resin orthe like is preferably used.

[Inorganic Filler (b)]

The inorganic filler (b) is added so as to improve the thermalconductivity of the second interlayer filler composition. By the secondinterlayer filler composition containing the inorganic filler (b) havinga thermal conductivity, high thermal conductivity can be imparted to thesecond interlayer filler composition, whereby thermal conduction betweenthe semiconductor substrate laminate and the organic substrate can beaccelerated and the temperature of the semiconductor device substratecan be lowered, and accordingly the semiconductor device can be operatedstably.

The thermal conductivity of the inorganic filler (b) is preferably atleast 1 W/(m·K), more preferably at least 2 W/(m·K). The thermalconductivity is preferably higher, but is usually at most 300 W/(m·K).

By the inorganic filler (b) having such a thermal conductivity, thesecond interlayer filler layer having sufficient thermal conductivitycan be obtained with an appropriate addition amount.

As the inorganic filler (b), the same filler as the above-describedinorganic filler (b) may be used.

That is, alumina (Al₂O₃, thermal conductivity: 30 W/(m·K)), aluminumnitride (AlN, thermal conductivity: 260 W/(m·K)), boron nitride (BN,thermal conductivity: 3 W/(m·K) (thickness direction), 275 W/(m·K)(in-plane direction)), silicon nitride (Si₃N₄, thermal conductivity: 23W/(m·K)) or silica (SiO₂, thermal conductivity: 1.4 W/(m·K)) or the likemay be used.

Such inorganic fillers (b) may be used alone or as a mixture of at leasttwo in optional combination and proportion.

The inorganic filler (b) preferably further has both stability againstoxygen, water and exposure to high temperature and a low dielectricproperty, in view of the reliability of a device bonded. Such aninorganic filler may be Al₂O₃, AlN, BN or SiO₂, preferably Al₂O₃, AlN orBN.

The particle size of the inorganic filler (b) is not particularlylimited, and usually, the average particle size is from 0.1 to 20 μm andthe maximum particle size is 30 μm, preferably the average particle sizeis from 0.2 to 17 μm and the average particle size is 25 μm, morepreferably the average particle size is from 0.3 to 15 μm and themaximum particle size is 20 μm.

The content of the inorganic filler (b) is usually at least 50 parts byweight and at most 400 parts by weight, more preferably at least 75parts by weight and at most 300 parts by weight per 100 parts by weightof the resin (a). If the content of the inorganic filler (b) is lessthan 50 parts by weight, no sufficient thermal conductivity is obtainedin some cases, and if it exceeds 400 parts by weight, the viscosity ofthe composition tends to be high, and a problem such that no uniformcoating film can be formed may arise.

[Other Components]

In the second interlayer filler composition, components other than theresin (a) and the inorganic filler (b) may be the curing agent (C), theflux (D) and other additives in the above-described first interlayercomposition. The purpose of use, the blend amounts and the like of themare the same as in the first interlayer filler composition.

(2-3) Second Three-Dimensional Integrated Circuit Laminate

The second three-dimensional integrated circuit laminate is produced bya process comprising a step of forming a coating film of the secondinterlayer filler composition to be a precursor of the second interlayerfiller layer on one or both of the surface of the semiconductorsubstrate laminate on the side where it is in contact with the organicsubstrate, and the surface of the organic substrate on the side where itis in contact with the semiconductor substrate laminate, and a step ofsubjecting the semiconductor substrate and the organic substrate topressure bonding to form a semiconductor substrate laminate having asecond interlayer filler layer between the semiconductor substratelaminate and the organic substrate.

The second interlayer filler composition may be the same as the firstinterlayer filler composition or may be different.

EXAMPLES

Now, the present invention will be described in further detail withreference to Examples. However, it should be understood that the presentinvention is by no means restricted to the following Examples within thescope of the present invention.

The components blended in the interlayer filler composition will bedescribed below.

(1) Resin (A)

Epoxy resin (A1): phenoxy resin (weight average molecular weight:26,000, epoxy equivalent: 4,600 g/equivalent, 30 wt % methyl ethylketone/cyclohexanone solution (in a volume ratio of 50:50))

Epoxy resin (A2-1): Bisphenol F liquid epoxy resin, tradename “jER1750”,manufactured by Mitsubishi Chemical Corporation

Epoxy resin (A2-2): “YL6800”, tradename, manufactured by MitsubishiChemical Corporation

Epoxy resin (A2-3): “1032H60”, tradename, manufactured by MitsubishiChemical Corporation

Epoxy resin (A2-4): “1001”, tradename, manufactured by MitsubishiChemical Corporation

Epoxy resin (A2-5): “YX4000”, tradename, manufactured by MitsubishiChemical Corporation

Epoxy resin (A2-6): “1006”, product name, manufactured by MitsubishiChemical Corporation

Epoxy resin (A3): “156S65”, tradename, manufactured by MitsubishiChemical Corporation

Reactive diluting agent (A4): 1,6-hexanediol diglycidyl ether,“YED216D”, tradename, manufactured by Yokkaichi Chemical Company Limited

(2) Inorganic Filler (B)

Inorganic filler (B-1): BN (boron nitride), “R-BN”, tradename,manufactured by NISSIN REFRATEC CO., LTD.

Inorganic filler (B-2): BN, “AP-170S”, tradename, manufactured by MARUKA

Inorganic filler (B-3): Silica, “PLV-4”, tradename, manufactured byTasumori Ltd.

(3) Curing Agent (C)

Curing agent (C-1): 2-ethyl-4(5)-methylimidazole, “jERCURE EMI24”,tradename, manufactured by Mitsubishi Chemical Corporation

Curing Agent (C-2): 2-phenyl-4,5-dihydroxymethylimidazole, “2PHZ-PW”,tradename, manufactured by Shikoku Chemicals Corporation

(4) Flux (D)

Flux (D-1): Dialkyl vinyl ether block bifunctional polymer typecarboxylic acid, “Santacid G”, tradename, manufactured by NOFCorporation

Flux (D-2): “Adipic acid”, tradename, manufactured by Wako Pure ChemicalIndustries, Ltd.

(5) Organic Solvent (E)

Methyl ethyl ketone: manufactured by Wako Pure Chemical Industries, Ltd.(special grade chemical)

Cyclohexanone: manufactured by Wako Pure Chemical Industries, Ltd.(special grade chemical)

(6) Dispersing Agent (F)

Dispersing agent (F-1): “BYK-2155”, product name, manufactured by BYKJapan KK

The phenoxy resin as the epoxy resin (A1) was prepared as follows.

215 parts by weight of YL6121H (epoxy equivalent: 171 g/equivalent, a1:1 mixture of 4,4′-biphenol type epoxy resin and3,3′,5,5′-tetramethyl-4,4′-biphenol type epoxy resin, manufactured byMitsubishi Chemical Corporation), 127 parts by weight of3,3′-dimethyl-4,4′-biphenol (OH equivalent: 107 g/equivalent,manufactured by Honshu Chemical Industry Co., Ltd.), 0.32 part by weightof a 27 wt % tetramethylammonium hydroxide aqueous solution and 228parts by weight of cyclohexanone as a reaction solvent were put in apressure resistant reactor equipped with a stirrer, and a reaction wascarried out in a nitrogen gas atmosphere at 180° C. for 5 hours. Then,171 parts by weight of cyclohexanone and 399 parts by weight of methylethyl ketone as solvents for dilution were added to adjust the solidcontent concentration. The solvents were removed from the reactionproduct by an usual method to obtain a 30 wt % resin solution.

The average particle size of the inorganic filler (B) in the resin, thespecific surface area, and the thermal conductivity of the interlayerfiller composition were measured by the following methods.

(Measurement Methods)

(1) Average particle size of inorganic filler (B) in resin 2 mL ofcyclohexanone was added to 4 mg of a mixture paste of the epoxyresin/the inorganic filler before addition of the curing agent, followedby ultrasonic treatment for 10 minutes, and using a particle sizedistribution measuring apparatus (“LA920”, tradename, manufactured byHoriba, Ltd.), the particle size distribution was measured by a batchcell using cyclohexanone as a solvent. From the obtained particle sizedistribution, the average particle size and the maximum particle size ofthe inorganic filler (B) after grinding were determined. The averageparticle size was on the volume basis, and the relative refractive indexwas 1.20.

(2) Specific Surface Area of Inorganic Filler (B)

A pretreatment of nitrogen gas flow at 250° C. for 15 minutes wasapplied to the inorganic filler, and then the specific surface area wasmeasured by a single-point BET method (absorption gas: nitrogen) usingMacsorb HM Model-1201 manufactured by Mountech Co., Ltd.

Physical properties of the obtained resin and the interlayer fillercomposition were measured by the following methods.

The thermal conductivity of the resin and the interlayer fillercomposition was determined by measuring the thermal diffusivity, thespecific gravity and the specific heat by the following apparatus andmultiplying these three measured values. Further, the coefficient oflinear thermal expansion was determined by a tensile method (load: 5 gf)in a nitrogen atmosphere.

Thermal conductivity=thermal diffusivity×specific gravity×specific heat

(1) Thermal diffusivity: measured by “ai-Phase Mobile 1μ”, tradename,manufactured by ai-Phase Co., Ltd.

(2) Specific gravity: measured by balance XS-204 manufactured byMettler-Toredo International Inc. (using “solid specific gravitymeasuring kit”)

(3) Specific heat: specific heat at 25° C. was determined by software ofa differential scanning calorimeter (“DSC7”), tradename, manufactured byPerkin Elmer Co., Ltd. at a temperature-raising rate of 10° C./min, orthe specific heat was determined by DSC320/6200, tradename, manufacturedby Seiko Instruments Inc.

(4) Coefficient of linear thermal expansion: determined by using TMA-50,tradename, manufactured by Shimadzu Corporation, as an average value atfrom −10° C. to 40° C.

Example 1

45 parts by weight of epoxy resin (A2-1), 5 parts by weight of reactivediluting agent (A4) and 50 parts by weight of inorganic filler (B-1)were mixed, and the mixture was passed through a three-roll mill ofwhich the roll distance was adjusted to 10 μm five times to obtain amixture paste of the epoxy resin/the inorganic filler.

The average particle size of the inorganic filler (B-1) in the mixturepaste of the epoxy resin/the inorganic filler was 0.6 μm. Further, thespecific surface area of the inorganic filler (B-1) was 9.69 m²/g.

5 parts by weight of curing agent (C-1) was added to 100 parts by weightof the mixture paste of the epoxy resin/the inorganic filler, followedby mixing by a rotary and revolutionary mixing apparatus (“AwatoriRentaro”, tradename, manufactured by THINKY CORPORATION) at 2,000revolutions under conditions of mixing for 5 minutes and bubble removalfor one minute.

The mixed paste was sandwiched between glass plates subjected to releasetreatment with a silicon rubber sheet having a thickness of 500 μm as aspacer, and heated at 140° C. for one hour and further heated at 150° C.for 4 hours to obtain an interlayer filler composition film (interlayerfiller layer). Of this film, the thermal conductivity was 1.2 W/(m·K),and the dielectric constant was 3.2. The dielectric constant wascalculated from the volume fraction of the filler component in theinterlayer filler composition based on the dielectric constants (epoxyresin: 2.8, boron nitride: 3.9) of the respective materials.

Example 2

The same operation as in Example 1 was carried out except that inorganicfiller (B-2) was used instead of inorganic filler (B-1) in Example 1.

The average particle size of the inorganic filler (B-2) by the abovemeasurement method was 4.1 μm. Further, the specific surface area of theinorganic filler (B-2) was 16 m²/g.

Of the obtained interlayer filler composition film, the thermalconductivity was 0.5 W/(m·K) and the dielectric constant was 3.2.Further, the dielectric constant was calculated from the volume fractionof the filler component in the interlayer filler composition based onthe dielectric constants (epoxy resin: 2.8, boron nitride: 3.9) of therespective materials.

Example 3

As epoxy resin (A), 5 g of the epoxy resin (A1) solution, 3.75 g ofepoxy resin (A2-2), 0.94 g (80 wt % cyclohexanone solution) of epoxyresin (A2-3), 2.14 g (70 wt % cyclohexanone solution) of epoxy resin(A2-4), 7.24 g of inorganic filler (B-1) and further, 24.0 g of zirconiaballs (YTZ-2) having a diameter of 2 mm were added, followed by stirringby a rotary and revolutionary stirring machine at 2,000 rpm for 33minutes. After completion of stirring, the beads were removed byfiltration, and 0.15 g of curing agent (C-2) and 0.15 g of flux (D-1)were added, followed by further stirring by a rotary and revolutionarystirring machine for 6 minutes to obtain an interlayer filler paste(coating fluid).

The particle size distribution of inorganic filler (B-1) in the obtainedinterlayer filler paste after stirring was measured, whereupon theaverage particle size was 1.0 μm and the maximum particle size was 5.9μm.

This material paste was applied to a glass substrate subjected torelease treatment and heated under reduced pressure at 100° C. for 90minutes to remove the solvent thereby to obtain a B-stage film. On thisfilm, a glass substrate subjecting to release treatment was furtherplaced to sandwich the B-stage film, followed by pressing (pressure: 1MPa) at 150° C. for one hour and then at 170° C. for one hour to formand cure the film to obtain an interlayer filler composition film havinga film thickness of 500 μm. The thermal conductivity of this film was1.1 W/(m·K). The coefficient of linear thermal expansion was 33 ppm/K.The dielectric constant was 3.2. The dielectric constant was calculatedfrom the volume fraction of the filler component in the interlayerfiller composition based on the dielectric constants (epoxy resin: 2.8,boron nitride: 3.9) of the respective materials.

Comparative Example 1

As epoxy resin (A), 5 g of the epoxy resin (A1) solution, 3.75 g ofepoxy resin (A2-2), 0.94 g (80 wt % cyclohexanone solution) of epoxyresin (A2-3) and 2.14 g (70 wt % cyclohexanone solution) of epoxy resin(A2-4), and 7.24 g of inorganic filler (B-1) were added, followed bystirring by a rotary and revolutionary stirring machine at 2,000 rpm for5 minutes to obtain an interlayer filler paste (coating fluid). Theparticle size distribution of the inorganic filler (B-1) in the obtainedinterlayer filler paste after stirring was measured by the sameapparatus as in Example 32, whereupon the maximum particle size waslarger than 10 μm.

Using this interlayer filler paste, the B-stage film was obtained in thesame manner as in Example 3. On the obtained B-stage film, the fillerwas visually confirmed in many points, and the film was non-uniform. Thecoefficient of linear thermal expansion of this film was 33 ppm/K. Thedielectric constant was 3.2. The dielectric constant was calculated fromthe volume fraction of the filler component in the interlayer fillercomposition based on the dielectric constants (epoxy resin: 2.8, boronnitride: 3.9) of the respective materials.

Example 4

As epoxy resin (A), 5 g of epoxy resin (A1) solution, 5.25 g of epoxyresin (A2-2), 0.94 g (80 wt % cyclohexanone solution) of epoxy resin(A2-3), and 7.24 g of inorganic filler (B-1), and further, 23.3 g ofzirconia balls (YTZ-2) having a diameter of 2 mm were added, followed bystirring by a rotary and revolutionary stirring machine at 2,000 rpm for33 minutes. After completion of stirring, the beads were removed byfiltration, and 0.15 g of curing agent (C-2) and 0.15 g of flux (D-1)were added, followed by further stirring by a rotary and revolutionarystirring machine for 6 minutes to obtain an interlayer filler paste(coating fluid).

This material paste was applied to a glass substrate subjected torelease treatment and heated under reduced pressure at 100° C. for 90minutes to distill the solvent off to form a B-stage film. On this film,a glass substrate subjected to release treatment was further placed tosandwich the film, followed by pressing (pressure: 1 MPa) at 150° C. forone hour and further at 170° C. for one hour to form and cure the filmto obtain an interlayer filler composition film having a film thicknessof 600 μm. Of this film, the thermal conductivity was 1.0 W/(m·K), andthe coefficient of linear thermal expansion was 31 ppm/K. The dielectricconstant was 3.2. The dielectric constant was calculated from the volumefraction of the filler component in the interlayer filler compositionbased on the dielectric constants (epoxy resin: 2.8, boron nitride: 3.9)of the respective materials.

Comparative Example 2

As epoxy resin (A), 6 g (80 wt % MEK solution) of epoxy resin (A3) wasadded to 5 g of the epoxy resin (A1) solution, followed by stirring by arotary and revolutionary stirring machine for 6 minutes. 0.12 g of flux(D-1) was added thereto, followed by further stirring by a rotary andrevolutionary stirring machine for 6 minutes to obtain an interlayerfiller paste (coating fluid).

This material paste was applied to a glass substrate subjected torelease treatment and heated under reduced pressure for 100° C. for 90minutes to distill the solvent off to form a B-stage film. On this film,a glass substrate subjected to release treatment was further placed tosandwich the film, followed by pressing (pressure: 1 MPa) at 150° C. for3 hours to form and cure the film to obtain an interlayer fillercomposition film having a film thickness of 500 μm. Of this film, thethermal conductivity was 0.2 W/(m·K), and the coefficient of linearthermal expansion was at least 100 ppm/K.

Example 5

As epoxy resin (A), 5 g of the epoxy resin (A1) solution, 3.75 g ofepoxy resin (A2-2), 0.94 g (80 wt % cyclohexanone solution) of epoxyresin (A2-3), 2.14 g (70 wt % cyclohexanone solution) of epoxy resin(A2-4), and 7.24 g of inorganic filler (B-1) and further 24.0 g ofzirconia balls (YTZ-2) having a diameter of 2 mm were added, followed bystirring by a rotary and revolutionary stirring machine at 2,000 rpm for33 minutes. After completion of stirring, the beads were removed byfiltration, and 0.15 g of curing agent (C-2) and 0.15 g of flux (D-1)were added, followed by further stirring by a rotary and revolutionarystirring machine for 6 minutes to obtain an interlayer filler paste(coating fluid).

This material paste was applied to a glass substrate subjected torelease treatment and heated under reduced pressure at 100° C. for 90minutes to distill the solvent off to form a B-stage film. On this film,a glass substrate subjected to release treatment was further placed tosandwich the film, followed by pressing (pressure: 1 MPa) at 150° C. forone hour and then at 170° C. for one hour to form and cure the film toobtain an interlayer filler composition film having a film thickness of600 μm.

Of this film, the thermal conductivity was 1.2 W/(m·K), the coefficientof linear thermal expansion was 33 ppm/K, and the dielectric constantwas 3.2.

The dielectric constant was calculated from the volume fraction of thefiller component in the interlayer filler composition based on thedielectric constants (epoxy resin: 2.8, boron nitride: 3.9) of therespective materials.

Example 6

As epoxy resin (A), 5 g of the epoxy resin (A1) solution, 3.75 g ofepoxy resin (A2-2), 0.94 g (80 wt % cyclohexanone solution) of epoxyresin (A2-3), 2.14 g (70 wt % cyclohexanone solution) of epoxy resin(A2-4), and 7.74 g of inorganic filler (B-1) and further 24.6 g ofzirconia balls (YTZ-2) having a diameter of 2 mm were added, followed bystirring by a rotary and revolutionary stirring machine at 2,000 rpm for33 minutes. After completion of stirring, the beads were removed byfiltration, and 0.15 g of curing agent (C-2) and 0.15 g of flux (D-1)were added, followed by further stirring by a rotary and revolutionarystirring machine for 6 minutes to obtain an interlayer filler paste(coating fluid).

This material paste was applied to a glass substrate subjected torelease treatment and heated under reduced pressure at 100° C. for 90minutes to distill the solvent off to form a B-stage film. On this film,a glass substrate subjected to release treatment was further placed tosandwich the film, followed by pressing (pressure: 1 MPa) at 150° C. forone hour and then at 170° C. for one hour to form and cure the film toobtain an interlayer filler composition film having a film thickness of500 μm.

Of this film, the thermal conductivity was 1.0 W/(m·K), the coefficientof linear thermal expansion was 33 ppm/K, and the dielectric constantwas 3.2.

The dielectric constant was calculated from the volume fraction of thefiller component in the interlayer filler composition based on thedielectric constants (epoxy resin: 2.8, boron nitride: 3.9) of therespective materials.

Example 7

In the same manner as in Example 6 except that silica (B-3) was used asinorganic filler (B), the film was formed and cured to obtain aninterlayer filler composition film. The thermal conductivity of thiscured film was 0.4 W/(m·K).

Example 8

2.50 g of epoxy resin (A2-3), 6.25 g of epoxy resin (A2-5) and 3.75 g ofepoxy resin (A2-6) were dissolved in 12.5 g of methyl ethyl ketone bystirring. To this solution, 0.25 g of dispersing agent (F-1), 0.25 g offlux (D-2) and 11.75 g of methyl ethyl ketone were added, and further,12.5 g of inorganic filler (B-1) and 100 g of zirconia balls (YTZ-0.5)having a diameter of 0.5 mm were added, followed by stirring by a rotaryand revolutionary stirring machine at 2,000 rpm for 10 minutes. Aftercompletion of stirring, the beads were removed by filtration, and 0.25 gof curing agent (C-2) was added, followed by further stirring by arotary and revolutionary stirring machine for 6 minutes to obtain aninterlayer filler paste (coating fluid). The average particle size andthe maximum particle size of the inorganic filler (B-1) in the obtainedinterlayer filler paste after stirring were measured, whereupon theaverage particle size was 4 μm and the maximum particle size was 9 μm.

25 μL of this interlayer filler paste was applied to a solder bumpsubstrate (CC80 Modell) made of silicon manufactured by WALTS, andsequentially heated at 60° C. for 15 minutes, at 80° C. for 15 minutesand at 120° C. for 30 minutes on a hot plate to dissolved the solventoff. Further, heating was carried out at 150° C. for 10 minutes on thehot plate to form a B-stage film.

This solder bump substrate and an organic interposer (CC80 Modell)manufactured by WALTS were bonded by contact bonding under heating to250° C. using a flip chip bonder (FC3000S) manufactured by TorayEngineering Co., Ltd., and after cooling, a post annealing treatment wascarried out at 165° C. for 2 hours to form a laminate. The electricresistance of a daisy chain in the interior of the laminate wasmeasured, whereupon it was at most 10Ω.

Further, the same interlayer filler paste was applied to a glasssubstrate subjected to release treatment and sequentially heated underreduced pressure at 80° C. for 30 minutes and at 120° C. for 30 minutesto distill the solvent off. On the film, a glass substrate subjected torelease treatment was further placed to sandwich the film, followed bypressing at 165° C. for 2 hours under a pressure of 1 MPa to form andcure the film to obtain an interlayer filler composition film having afilm thickness of 500 μm.

Of this film, the thermal conductivity was 1.1 W/(m·K), the coefficientof linear thermal expansion was 34 ppm/K, and the dielectric constantwas 3.2. The dielectric constant was calculated from the volume fractionof the filler component in the interlayer filler composition based onthe dielectric constants (epoxy resin: 2.8, boron nitride: 3.9) of therespective materials.

Example 9

In the same manner as in Example 8, a laminate was formed, and theelectric resistance of a daisy chain in the interior of the laminate wasmeasured, whereupon it was at most 10Ω.

This laminate was placed on a hot plate at 120° C. so that theinterposer substrate faced downward, and the temperature over which thesurface temperature of the silicon substrate increased from 25° C. to100° C. was measured, whereupon it was 2.4 seconds.

Example 10

In the same manner as in Example 8, a laminate was formed, and theelectric resistance of a daisy chain in the interior of the laminate wasmeasured, whereupon it was at most 10Ω.

This laminate was placed firstly on a plate at −55° C., then a plate at23° C., further on a plate at 125° C. and finally on a plate at 23° C.each for 10 seconds, and this cycle was repeated five times to applythermal shock. After this operation, the electric resistance of a daisychain in the interior of the laminate was measured, whereupon it was atmost 20Ω.

Example 11

An interlayer filler paste prepared in the same manner as in Example 8was applied to a glass substrate subjected to release treatment andsequentially heated under reduced pressure at 80° C. for 30 minutes andthen at 120° C. for 30 minutes to distill the solvent off. On the film,a glass substrate subjected to release treatment was further placed tosandwich the film, followed by pressing at 165° C. for 2 hours under apressure of 1 MPa to form and cure the film to obtain an interlayerfiller composition film having a film thickness of 500 μm.

This cured film was dried in a vacuum oven at 125° C. for 5 hours toobtain a cured film having a film weight of 1.6179 g after drying. Then,this cured film was held in a constant temperature constant humidityoven at 85° C. under 85% for 10 hours, and then the weight of the filmwas measured, whereupon the weight of the cured film was 1.6303 g, andthe weight increase ratio by water absorption was 0.77%, which is lessthan 1% and good.

INDUSTRIAL APPLICABILITY

With the three-dimensional integrated circuit laminate of the presentinvention excellent in the heat dissipation property and thereliability, an electronic device capable of stably operating asemiconductor device can be obtained, and the present invention is veryuseful.

This application is a continuation of PCT Application No.PCT/JP2012/058676, filed on Mar. 30, 2012, which is based upon andclaims the benefit of priority from Japanese Patent Application No.2011-080752 filed on Mar. 31, 2011, Japanese Patent Application No.2011-080753 filed on Mar. 31, 2011, Japanese Patent Application No.2011-080754 filed on Mar. 31, 2011, Japanese Patent Application No.2011-080755 filed on Mar. 31, 2011, and Japanese Patent Application No.2011-080756 filed on Mar. 31, 2011. The contents of those applicationsare incorporated herein by reference in its entirety.

REFERENCE SYMBOLS

-   -   1: First three-dimensional integrated circuit laminate    -   10, 20, 30: Semiconductor substrate    -   11, 21, 31: Semiconductor device layer    -   12, 22, 32: Buffer coat film    -   13, 23, 33: Semiconductor substrate through-hole electrode    -   14, 24, 34, 103: Land terminal    -   15, 25, 35: Solder bump    -   40, 50: First interlayer filler layer    -   100: Second three-dimensional integrated circuit laminate    -   101: Organic substrate    -   102: Second interlayer filler layer

What is claimed is:
 1. A three-dimensional integrated circuit laminate,which comprises a semiconductor substrate laminate having at least twosemiconductor substrates each having a semiconductor device layer formedthereon laminated, and has a first interlayer filler layer containing aresin (A) and an inorganic filler (B) and having a thermal conductivityof at least 0.8 W/(m·K) between the semiconductor substrates.
 2. Thethree-dimensional integrated circuit laminate according to claim 1,wherein the coefficient of linear thermal expansion of the firstinterlayer filler layer is at least 3 ppm/K and at most 70 ppm/K.
 3. Thethree-dimensional integrated circuit laminate according to claim 1,wherein the dielectric constant of the inorganic filler (B) contained inthe first interlayer filler layer is at most
 6. 4. The three-dimensionalintegrated circuit laminate according to claim 1, wherein the inorganicfiller (B) contained in the first interlayer filler layer has an averageparticle size of at least 0.1 μm and at most 10 μm, a maximum particlesize of 10 μm, and a thermal conductivity of at least 2 W/(m·K).
 5. Athree-dimensional integrated circuit laminate, which comprises asemiconductor substrate laminate having at least two semiconductorsubstrates each having a semiconductor device layer formed thereonlaminated, and has a first interlayer filler layer containing a resin(A) and an inorganic filler (B) and having a coefficient of linearthermal expansion of at least 3 ppm/K and at most 70 ppm/K between thesemiconductor substrates, and the inorganic filler (B) having an averageparticle size of at least 0.1 μm and at most 10 μm and a maximumparticle size of 10 μm.
 6. A three-dimensional integrated circuitlaminate, which comprises a semiconductor substrate laminate having atleast two semiconductor substrates each having a semiconductor devicelayer formed thereon laminated, and has a first interlayer filler layercontaining a resin (A) and an inorganic filler (B) between thesemiconductor substrates, and the inorganic filler (B) having an averageparticle size of at least 0.1 μm and at most 10 μm, a maximum particlesize of 10 μm, and a dielectric constant of at most
 6. 7. Thethree-dimensional integrated circuit laminate according to claim 1,wherein the first interlayer filler layer contains the inorganic filler(B) in an amount of at least 50 parts by weight and at most 400 parts byweight per 100 parts by weight of the resin (A).
 8. Thethree-dimensional integrated circuit laminate according to claim 1,wherein the specific surface area of the inorganic filler (B) containedin the first interlayer filler layer between the semiconductorsubstrates is at least 1 m²/g and at most 60 m²/g.
 9. Thethree-dimensional integrated circuit laminate according to claim 1,wherein the semiconductor substrates are silicon substrates.
 10. Thethree-dimensional integrated circuit laminate according to claim 1,wherein of the inorganic filler (B), the average particle size is atleast 0.2 μm and at most 5 μm, and the specific surface area is at least1 m²/g and at most 25 m²/g.
 11. The three-dimensional integrated circuitlaminate according to claim 1, wherein the inorganic filler (B) is boronnitride.
 12. The three-dimensional integrated circuit laminate accordingto claim 1, wherein the resin (A) is a resin containing an epoxy resinas the main component.
 13. The three-dimensional integrated circuitlaminate according to claim 1, wherein the thickness of the firstinterlayer filler layer is at least 1 μm and at most 50 μm.
 14. Thethree-dimensional integrated circuit laminate according to claim 1,which has solder connection terminals for electric signal connectionbetween the semiconductor substrates each having a semiconductor devicelayer formed thereon in the first interlayer filler layer.
 15. Thethree-dimensional integrated circuit laminate according to claim 1,wherein the semiconductor substrate laminate is further mounted on anorganic substrate, and a second interlayer filler layer containing aresin (a) and an inorganic filler (b) is formed between thesemiconductor substrate laminate and the organic substrate.
 16. Thethree-dimensional integrated circuit laminate according to claim 15,wherein the organic substrate has a multilayer circuit structure havinga wiring layer containing copper in a resin plate containing an epoxyresin as a resin component.
 17. The three-dimensional integrated circuitlaminate according to claim 15, wherein the second interlayer fillerlayer contains the inorganic filler (b) in an amount of at least 50parts by weight and at most 400 parts by weight per 100 parts by weightof the resin (a).
 18. The three-dimensional integrated circuit laminateaccording to claim 15, wherein the coefficient of linear thermalexpansion of the second interlayer filler layer is at least 10 ppm/K andat most 50 ppm/K.
 19. The three-dimensional integrated circuit laminateaccording to claim 15, wherein the dielectric constant of the secondinterlayer filler layer is at most
 6. 20. The three-dimensionalintegrated circuit laminate according to claim 15, wherein the resin (a)is a resin containing an epoxy resin as the main component.
 21. Thethree-dimensional integrated circuit laminate according to claim 15,wherein the inorganic filler (b) has an average particle size of atleast 0.1 μm and at most 20 μm, a maximum particle size of 30 μm, aspecific surface area of at least 1 m²/g and at most 60 m²/g, a thermalconductivity of at least 1 W/(m·K), and a dielectric constant of at most6.
 22. An interlayer filler for a first interlayer filler layer betweensemiconductor substrates of a three-dimensional integrated circuitlaminate comprising a semiconductor substrate laminate having at leasttwo semiconductor substrates each having a semiconductor device layerformed thereon laminated, which comprises a resin (A) and an inorganicfiller (B) having an average particle size of at least 0.1 μm and atmost 5 μm, a maximum particle size of 10 μm and a dielectric constant ofat most 6, and has a coefficient of linear thermal expansion of at least3 ppm/K and at most 70 ppm/K.
 23. An interlayer filler for a secondinterlayer filler layer between a semiconductor substrate laminate andan organic substrate of a three-dimensional integrated circuit laminatecomprising the semiconductor substrate laminate having at least twosemiconductor substrates each having a semiconductor device layer formedthereon laminated, which comprises a resin (a) and an inorganic filler(b) having an average particle size of at least 0.1 μm and at most 20μm, a maximum particle size of 30 μm and a dielectric constant of atmost 6, and has a coefficient of linear thermal expansion of at least 10ppm/K and at most 50 ppm/K.
 24. The interlayer filler according to claim22, wherein the specific surface area of the inorganic filler (B) is atleast 1 m²/g and at most 60 m²/g.